Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs

By: Larson, L.; Choi, R.; Sim, J.H.; Lee, B.H.; Bersuker, G.; Peterson, J.J.; Moumen, N.; Matthew, K.;

2004 / IEEE / 0-7803-8315-X

Description

This item was taken from the IEEE Conference ' Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs ' Hot carrier reliability of poly-gated and TiN-gated MOSFETs with HfSiON gate dielectric is studied. For short channel devices, worse degradation of HfSiON occurs at V/sub g/=V/sub d/ while oxide devices are degraded more at V/sub g/=V/sub d//2 similar to oxide control devices. Localized transient charging at the drain comer of the HfSiON layer is proposed to explain the channel length dependence and time dependent relaxation of HC reliability characteristics.