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Dynamic positive bias temperature instability characteristics of ultra-thin HfO/sub 2/ NMOSFET
By: Se Jong Rhee; Lee, J.C.; Akbar, M.S.; Chang Hwan Choi; Rino Choi; Hag-Ju Cho; Chang Seok Kang; Chang Yong Kang; Young Hee Kim;
2004 / IEEE / 0-7803-8315-X
This item was taken from the IEEE Conference ' Dynamic positive bias temperature instability characteristics of ultra-thin HfO/sub 2/ NMOSFET ' We present the threshold voltage instability characteristics of high-k HfO/sub 2/ NMOSFET dielectric with SiON interface layer under dynamic stress. Compared to DC stress, reduced threshold voltage shift was observed at higher frequency and lower duty cycle in AC unipolar stress. Similarly, the degradation of maximum transconductance was also reduced with AC stress conditions. However, the degradation in subthreshold swing was found to be negligible and fairly independent of stress frequencies and duty cycles in AC unipolar stress. The traps in bulk of HfO/sub 2/ dielectric, which is proportional to its physical thickness, is believed as the primary factor for larger threshold voltage shift as the thickness of HfO/sub 2/ increases. Compared to the result under DC constant voltage stress, AC unipolar stress allows higher 10-year lifetime operating voltage.
Reduced Threshold Voltage Shift
Larger Threshold Voltage Shift
High K Dielectric Materials
High-k Gate Dielectrics
Dynamic Positive Bias Temperature Instability Characteristics
Semiconductor Device Breakdown
Integrated Circuit Reliability
Cmos Integrated Circuits
Semiconductor Device Reliability
Ultra-thin Hfo/sub 2/ Nmosfet