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Effects of gate electrodes and barrier heights on the breakdown characteristics and Weibull slopes of HfO/sub 2/ MOS devices

By: Kim, Y.H.; Lee, J.C.; Misra, V.; Lee, J.H.; Jha, R.; Choi, R.;

2004 / IEEE / 0-7803-8315-X

Description

This item was taken from the IEEE Conference ' Effects of gate electrodes and barrier heights on the breakdown characteristics and Weibull slopes of HfO/sub 2/ MOS devices ' In this work, we present the effect of gate electrodes and barrier heights on the breakdown characteristics and Weibull slopes of HfO/sub 2/ MOS devices. Higher Weibull slope (/spl beta/) of Ru gate electrode has been observed when compared that of Ru-Ta alloy. The higher /spl beta/ in Ru devices is due to smaller charge fluence which results from relatively higher barrier height. Varying SiO/sub 2/ and HfO/sub 2/ were investigated in order to understand ultra-thin HfO/sub 2/ gate stack structure. We found that there is bi-modal defect generation rate on High-k/SiO/sub 2/ stack. Two-steps breakdown process was clearly observed and Weibull slope of soft breakdown (1st breakdown) shows lower /spl beta/ value compared to that of hard breakdown (2/sup nd/ breakdown). Soft breakdown characteristics were dependent on the barrier heights. The bi-modal defect generations are believed to be resulted from the breakdown in interface and bulk layer. Weibull slope of high-k gate stacks is a strong function of the inter-face layer thickness and the barrier height by gate electrode workfunction, whereas it is a weak function of high-k layer thickness.