Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

An impedance-phase angle (Z-theta) method for capacitance extraction of ultra-thin gate dielectrics at intermediate frequency [MOS devices]
By: Prasad, S.; Chien-Hwa Chang; Lin, J.; Loh, W.;
2004 / IEEE / 0-7803-8262-5
Description
This item was taken from the IEEE Conference ' An impedance-phase angle (Z-theta) method for capacitance extraction of ultra-thin gate dielectrics at intermediate frequency [MOS devices] ' Traditional C-V measurement is not accurate for extraction of gate oxide thickness below 15 /spl Aring/ due to high gate leakage current. In this paper, without using such a high frequency approach as S-parameter extraction, we propose a new approach using Z-theta (impedance-phase angle) measurement and a more comprehensive equivalent circuit model. A parameter extraction tool (PET), consisting of HSPICE simulator and a least square optimizer, is developed to extract the gate capacitance from the Z-theta measurement and a new equivalent circuit model. This method can account for parasitic effects, such as stray capacitance induced by chuck and inductance at high frequency. We demonstrated that this proposed approach has the capability to measure the gate capacitance correctly down to 10 /spl Aring/.
Related Topics
Capacitance Measurement
Dielectric Thin Films
Leakage Currents
Equivalent Circuits
10 /spl Aring/
Impedance-phase Angle Measurement
Z-theta Method
Gate Capacitance Extraction
Ultra-thin Gate Dielectrics
Mos Devices
Gate Leakage Current
Equivalent Circuit Model
Parameter Extraction Tool
Pet
Hspice
Least Square Optimizer
Parasitic Effects
Chuck Induced Stray Capacitance
High Frequency Inductance Effects
Impedance
Dielectric Devices
Frequency
Mos Devices
Parasitic Capacitance
Dielectric Measurements
Equivalent Circuits
Capacitance Measurement
Capacitance-voltage Characteristics
Current Measurement
Semiconductor Device Models
Semiconductor Device Measurement
Mis Devices
Least Squares Approximations
Engineering
Gate Oxide Thickness