Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
The effects of nitrogen in HfO/sub 2/ for improved MOSFET performance
By: Choi, R.; Kang, C.S.; Kang, C.Y.; Cho, H.-J.; Kim, Y.H.; Rhee, S.J.; Lee, J.C.; Choi, C.H.; Akbar, M.S.;
2003 / IEEE / 0-7803-8139-4
This item was taken from the IEEE Conference ' The effects of nitrogen in HfO/sub 2/ for improved MOSFET performance ' In this study, HfSiON was applied as a top layer of HfO/sub 2/ to achieve higher mobility. The effects of nitrogen and its profile on MOSFET performance of high-k devices are investigated.
Hfo/sub 2/ Layer
Dielectrics And Electrical Insulation
Dielectric Thin Films