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EOT scaling and device issues for high-k gate dielectrics

By: Huff, H.R.; Hong-Jyh Li; Peterson, J.; Gutt, J.; Gopalan, S.; Gardner, M.I.;

2003 / IEEE / 4-89114-037-2

Description

This item was taken from the IEEE Conference ' EOT scaling and device issues for high-k gate dielectrics ' In this paper, we fabricate a high-k transistor for equivalent oxide thickness (EOT) scaling involving ALD and MOCVD.