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Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers
2003 / IEEE / 0-7803-7888-1
This item was taken from the IEEE Conference ' Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers ' In this paper, we present a QDIP heterostructure, comprised of InAs QDs embedded in a periodic AlAs/GaAs superlattice (SL) barrier. This SL barrier allows us to control the performance of QDIPs, culminating in state-of-the-art responsivity and conversion efficiency for a QDIP with a total SL period of 15 nm.
Periodic Alas-gaas Superlattice Barriers
Quantum Dot Infrared Photodetector Heterostructure
Us Department Of Transportation
Semiconductor Quantum Dots
Quantum Dot Infrared Photodetector Performance Control