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SGOI thinning and uniformity improvement using a fluoride GCIB process

By: Degenkolb, E.; Santeufemio, C.; MacCrimmon, R.; Tetreault, T.G.; Fenner, D.B.; Skinner, W.; Allen, L.P.; Chu, J.O.; Hautala, J.;

2003 / IEEE / 0-7803-7815-6

Description

This item was taken from the IEEE Conference ' SGOI thinning and uniformity improvement using a fluoride GCIB process ' In this paper, we investigates the first time use of a non-agglomerate forming, fluoride gas cluster ion beam rapid etch and smooth process on SiGe transfer layers for SGOI substrate fabrication. Atomic force microscopy and spectroscopic ellipsometry were employed to determine surface morphology and thickness changes.