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Polarity dependence of the reliability characteristics of HfO/sub 2/ with poly-Si gate electrode
By: Choi, R.; Kang, C.S.; Onishi, K.; Kim, Y.H.; Lee, J.C.; Akbar, M.S.; Cho, H.-J.;
2003 / IEEE / 0-7803-7727-3
This item was taken from the IEEE Conference ' Polarity dependence of the reliability characteristics of HfO/sub 2/ with poly-Si gate electrode ' In this paper, polysilicon gate electrode was used in order to investigate the effects of both electron and hole injection from the gate. HfO/sub 2/ was directly deposited on Si-substrate without any intentional interface layer. In addition to polarity dependence of HfO/sub 2/breakdown characteristics, charge trapping behavior under unipolar AC stressing, and bias temperature instability under gate injection and substrate injection have been investigated.
Semiconductor Device Reliability
Poly-si Gate Electrode
Polysilicon Gate Electrode
Si Substrate Injection
Bias Temperature Instability
Semiconductor Device Breakdown