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Application of top HfSiON layer for improved poly-gated HfO/sub 2/ PMOSFET performance

By: Onishi, K.; Akbar, M.S.; Kang, C.S.; Cho, H.-J.; Lee, J.C.; Choi, R.; Kim, Y.H.;

2003 / IEEE / 0-7803-7727-3

Description

This item was taken from the IEEE Conference ' Application of top HfSiON layer for improved poly-gated HfO/sub 2/ PMOSFET performance ' In this paper, application of amorphous HfSiON layer on HfO/sub 2/ was evaluated for improved poly-Si gated HfO/sub 2/ PMOSFET performance.HfSiON process by reoxidation method was developed and the effects of its use as a top layer of HfO/sub 2/ for PMOSFET were investigated. The top HfSiON layer was demonstrated to improve the characteristics of PMOSFET through better thermal stability and immunity to boron diffusion compared to HfON.