Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Dynamic reliability characteristics of ultra-thin HfO/sub 2/

By: Choi, R.; Kim, Y.H.; Kang, C.S.; Onishi, K.; Cho, H.-J.; Lee, J.C.; Shahriar, A.; Krishnan, S.;

2003 / IEEE / 0-7803-7649-8


This item was taken from the IEEE Conference ' Dynamic reliability characteristics of ultra-thin HfO/sub 2/ ' In this work, we present time-to-breakdown characteristics of HfO/sub 2/ under unipolar AC voltage stress on MOS capacitors. It is shown that HfO/sub 2/ displays a longer lifetime under AC stress than constant voltage stress. Higher frequency and lower duty cycle in the AC stress resulted in a longer lifetime enhancement. As the thickness decreases, the amount of lifetime enhancement decreases. The enhancement of unipolar t/sub BD/ is attributed to less charge trapping during the ""on time"", t/sub on/ and charge detrapping during the off time, t/sub off/. It is proposed that the characteristic time (/spl tau//sub in/) for charge to be trapped in HfO/sub 2/ is longer than t/sub on/ of unipolar stress. Also, we found a strong correlation between t/sub on/ and t/sub off/ with regard to how it leads to lifetime enhancement.