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Nitrogen concentration effects and performance improvement of MOSFETs using thermally stable HfO/sub x/N/sub y/ gate dielectrics

By: Kim, Y.H.; Choi, R.; Onishi, K.; Cho, H.-J.; Chang Seok Kang; Nieh, R.; Shahriar, A.; Lee, J.C.; Krishnan, S.; Han, J.;

2002 / IEEE / 0-7803-7462-2

Description

This item was taken from the IEEE Conference ' Nitrogen concentration effects and performance improvement of MOSFETs using thermally stable HfO/sub x/N/sub y/ gate dielectrics ' The effects of nitrogen concentration on the material and electrical properties of HfO/sub x/N/sub y/ gate dielectrics were investigated. Higher concentration of nitrogen provides better thermal stability while sacrificing mobility. However, with high temperature forming gas (F/G) anneal, HfO/sub x/N/sub y/ showed improved peak mobility (/spl sim/250 cm/sup 2//eV) as well as superior thermal stability.