Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Nitrogen concentration effects and performance improvement of MOSFETs using thermally stable HfO/sub x/N/sub y/ gate dielectrics
By: Kim, Y.H.; Choi, R.; Onishi, K.; Cho, H.-J.; Chang Seok Kang; Nieh, R.; Shahriar, A.; Lee, J.C.; Krishnan, S.; Han, J.;
2002 / IEEE / 0-7803-7462-2
This item was taken from the IEEE Conference ' Nitrogen concentration effects and performance improvement of MOSFETs using thermally stable HfO/sub x/N/sub y/ gate dielectrics ' The effects of nitrogen concentration on the material and electrical properties of HfO/sub x/N/sub y/ gate dielectrics were investigated. Higher concentration of nitrogen provides better thermal stability while sacrificing mobility. However, with high temperature forming gas (F/G) anneal, HfO/sub x/N/sub y/ showed improved peak mobility (/spl sim/250 cm/sup 2//eV) as well as superior thermal stability.
Hfo/sub X/n/sub Y/
High Temperature Forming Gas Anneal
High-k Gate Dielectrics
Thermally Stable Gate Dielectrics
Dielectric Thin Films