Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Thermally stable CVD HfO/sub x/N/sub y/ advanced gate dielectrics with poly-Si gate electrode
By: Lu, N.; Choi, C.H.; Jeon, T.S.; Rhee, S.J.; Sim, J.H.; Kwong, D.L.; Niwa, M.; Clark, R.;
2002 / IEEE / 0-7803-7462-2
This item was taken from the IEEE Conference ' Thermally stable CVD HfO/sub x/N/sub y/ advanced gate dielectrics with poly-Si gate electrode ' In this paper, for the first time, we report high quality CVD hafnium oxynitride (HfOxNy) MOSFETs with conventional self-aligned poly-Si gate. These CVD HfOxNy films deposited using TDEAH (Tetrakisdiethylamino hafnium, C/sub 16/H/sub 40/N/sub 4/Hf) and NH/sub 3/ remain amorphous after 900/spl sim/950/spl deg/C annealing. Compared to HfO/sub 2/, HfOxNy exhibits reduced leakage current by 2/spl sim/3 orders of magnitude, excellent boron penetration immunity, superior thermal stability of both EOT and leakage current after high temperature annealing, and excellent reliability.
High-k Gate Dielectric
Self-aligned Poly-si Gate Electrode
Hfo/sub X/n/sub Y/ Cvd Film
High Temperature Annealing
900 To 950 Degc
Dielectric Thin Films
Equivalent Oxide Thickness