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Thermally stable CVD HfO/sub x/N/sub y/ advanced gate dielectrics with poly-Si gate electrode

By: Lu, N.; Choi, C.H.; Jeon, T.S.; Rhee, S.J.; Sim, J.H.; Kwong, D.L.; Niwa, M.; Clark, R.;

2002 / IEEE / 0-7803-7462-2

Description

This item was taken from the IEEE Conference ' Thermally stable CVD HfO/sub x/N/sub y/ advanced gate dielectrics with poly-Si gate electrode ' In this paper, for the first time, we report high quality CVD hafnium oxynitride (HfOxNy) MOSFETs with conventional self-aligned poly-Si gate. These CVD HfOxNy films deposited using TDEAH (Tetrakisdiethylamino hafnium, C/sub 16/H/sub 40/N/sub 4/Hf) and NH/sub 3/ remain amorphous after 900/spl sim/950/spl deg/C annealing. Compared to HfO/sub 2/, HfOxNy exhibits reduced leakage current by 2/spl sim/3 orders of magnitude, excellent boron penetration immunity, superior thermal stability of both EOT and leakage current after high temperature annealing, and excellent reliability.