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Fabrication of high quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs using deuterium anneal
By: Chang Seok Kang; Onishi, K.; Rino Choi; Lee, J.C.; Shahriar, A.; Gopalan, S.; Hag-ju Cho; Krishnan, S.; Han, J.H.; Kim, Y.H.; Renee Nieh;
2002 / IEEE / 0-7803-7462-2
This item was taken from the IEEE Conference ' Fabrication of high quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs using deuterium anneal ' The effects of high-temperature deuterium annealing on MOSFETs with HfO/sub 2/ gate dielectric and TaN gate electrode has been studied and compared to the control and forming gas (FG) annealed samples. Both FG and D/sub 2/ anneal improved interface qualities and resulted in better MOSFET characteristics in comparison to control samples. These improvements resulted from both the additional thermal budget of high temperature anneal and the improvement of interface quality caused by the hydrogen and deuterium atoms. But unlike FG D/sub 2/ anneal showed negligible degradation of reliability.
Interface Quality Improvement
Tan Gate Electrode
High-temperature D/sub 2/ Annealing
Hfo/sub 2/ Gate Dielectric Mosfets
High Quality Gate Dielectric
Dielectric Thin Films
Ultra-thin Hfo/sub 2/ Gate Dielectric