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Low temperature deposition of hafnium silicate gate dielectrics for TFTs on plastic substrates

By: Wallace, R.M.; Punchaipetch, P.; Pant, G.; Gnade, B.E.;

2002 / IEEE / 0-7803-7500-9

Description

This item was taken from the IEEE Conference ' Low temperature deposition of hafnium silicate gate dielectrics for TFTs on plastic substrates ' Summary form only given. Hafnium silicate (HfSi/sub x/O/sub y/) is being studied as a potential candidate material to replace SiO/sub 2/ as the gate dielectric in scaled silicon transistors due to its relatively high dielectric constant and high thermal stability. The dielectric constant of HfSi/sub x/O/sub y/ is /spl sim/8-15, depending on composition, which is 2-4 times higher than SiO/sub 2/. In this paper we describe the formation and characterization of hafnium silicate by UV/O/sub 3/ oxidation of hafnium silicide as a potential gate dielectric candidate for high performance thin-film transistors on plastic substrates.