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SOI uniformity and surface smoothness improvement using GCIB processing

By: Caliendo, S.; Allen, L.P.; Santeufemio, C.; Degenkolb, E.; Tetreault, T.G.; Tabat, M.; Walsh, M.; Harrington, E.; Hofmeester, N.;

2002 / IEEE / 0-7803-7439-8

Description

This item was taken from the IEEE Conference ' SOI uniformity and surface smoothness improvement using GCIB processing ' This paper investigates the use of gas cluster ion beam (GCIB) processing on SOI substrates for reducing the high frequency surface roughness of the starting material while improving the wafer uniformity. AFM images and power spectral density measurements of the pre- and post-GCIB surfaces are examined to determine the spatial-frequency range of the surface features most affected by the gas clusters.