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Improved thermal stability and device performance of ultra-thin (EOT<10 /spl Aring/) gate dielectric MOSFETs by using hafnium oxynitride (HfO/sub x/N/sub y/)
By: Lee, J.C.; Krishnan, S.; Goplan, S.; Nieh, R.; Chang Seok Kang; Choi, R.; Onishi, K.; Cho, H.-J.;
2002 / IEEE / 0-7803-7312-X
This item was taken from the IEEE Conference ' Improved thermal stability and device performance of ultra-thin (EOT<10 /spl Aring/) gate dielectric MOSFETs by using hafnium oxynitride (HfO/sub x/N/sub y/) ' Hafnium oxynitride (HfO/sub x/N/sub y/) film was prepared and characterized for gate dielectrics application with EOT<10 /spl Aring/ for the first time. Thermal stability and crystallization during the subsequent thermal process were improved significantly by using HfO/sub x/N/sub y/ over HfO/sub 2/. Furthermore, excellent transistor characteristics were obtained for both p and nMOSFETs.
Ultra-thin Gate Dielectric Mosfet
Hfo/sub X/n/sub Y/ Dielectric
High-k Gate Dielectric
Equivalent Oxide Thickness
Dielectric Thin Films
Semiconductor Device Measurement