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Wide-band compact modeling of spiral inductors in RFICs

By: Srinivasan, G.; Kyuwoon Hwang; Pichler, C.; Francis, P.; Melendy, D.; Weisshaar, A.;

2002 / IEEE / 0-7803-7239-5


This item was taken from the IEEE Conference ' Wide-band compact modeling of spiral inductors in RFICs ' A new wide-band compact modeling methodology for planar spiral inductors on lossy silicon substrate is presented. The new ideal lumped-element equivalent circuit model employs transformer loops in the series branch to include the effects of the frequency-dependent losses, in particular eddy-current loss in the bulk silicon substrate. A robust automated extraction procedure is employed to extract the element values of the new compact model. The new automated modeling methodology has been applied to a typical 1.5 nH spiral fabricated on a low-resistivity CMOS substrate. The frequency-dependent series resistance and inductance as well as the quality factor obtained with the new wideband model are in excellent agreement with the measured results over a 10 GHz bandwidth.