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Charging effects on reliability of HfO/sub 2/ devices with polysilicon gate electrode

By: Gopalan, S.; Hag-Ju Cho; Rino Choi; Chang Seok Kang; Nieh, R.; Onishi, K.; Lee, J.C.; Krishnan, S.;

2002 / IEEE / 0-7803-7352-9

Description

This item was taken from the IEEE Conference ' Charging effects on reliability of HfO/sub 2/ devices with polysilicon gate electrode ' Time dependent dielectric breakdown and bias temperature instability of HfO/sub 2/ devices with polysilicon gate electrodes are studied. Both N and PMOS capacitors have sufficient TDDB lifetime, whereas PMOS capacitors show gradual increase in the leakage current during stress. HfO/sub 2/ PMOSFET's without nitridation have sufficient immunity against negative bias temperature instability. Bias temperature instability for NMOS can be a potential scaling limit for HfO/sub 2/.