Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation

By: Murakami, E.; Aono, H.; Ohji, Y.; Kubota, K.; Makabe, K.; Okuyama, K.; Ozaki, H.; Watanabe, K.; Kuroda, K.; Yanagisawa, K.;

2002 / IEEE / 0-7803-7352-9

Description

This item was taken from the IEEE Conference ' NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation ' We demonstrate a new mode of Hot-Carrier (HC) degradation of p-MOSFETs. A positive feedback HC degradation caused by positive fixed oxide charge increasing the electric field at the drain edge is observed. When TTL AC stress (HC and NBT stress one after another) is applied, this degradation is enhanced. It is assumed that NBT stress produces positive fixed oxide charges easily (NBT-induced HC degradation). It is also shown that this new degradation can be suppressed by halo design.