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Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride

By: Zhijiong Luo; Wenjuan Zhu; Chenming Hu; Tsu-Jae King; Min She; Tso-Ping Ma; Jin-Ping Han;

2001 / IEEE / 0-7803-7432-0

Description

This item was taken from the IEEE Conference ' Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride ' High-quality JVD nitride is applied to a P-channel flash memory as the tunneling dielectric for the first time. Compared to control devices with SiO/sub 2/ tunneling dielectric, much faster programming speed can be achieved with low programming voltage as well as better retention time. Multilevel capability is also demonstrated. This device can be programmed by hot electrons and erased by hot holes, or vice versa.