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Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride
2001 / IEEE / 0-7803-7432-0
This item was taken from the IEEE Conference ' Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride ' High-quality JVD nitride is applied to a P-channel flash memory as the tunneling dielectric for the first time. Compared to control devices with SiO/sub 2/ tunneling dielectric, much faster programming speed can be achieved with low programming voltage as well as better retention time. Multilevel capability is also demonstrated. This device can be programmed by hot electrons and erased by hot holes, or vice versa.
Low-voltage Fast-programming P-channel Flash Memory
Jvd Tunneling Nitride
Low Programming Voltage
Hot Electron Programming
Hot Hole Erasure
Jet Vapor Deposition
Secondary Generated Hot Electron Injection
Si/sub 3/n/sub 4/
Cmos Memory Circuits