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Performance effects of two nitrogen incorporation techniques on TaN/HfO2 and poly/HfO2 MOSCAP and MOSFET devices

By: Nieh, R.; Lee, J.C.; Krishna, S.; Gopalan, S.; Chang Seok Kang; Hag-Ju Cho; Rino Choi; Onishi, K.;

2001 / IEEE / 4-89114-021-6

Description

This item was taken from the IEEE Conference ' Performance effects of two nitrogen incorporation techniques on TaN/HfO2 and poly/HfO2 MOSCAP and MOSFET devices ' In the coming MOS generations, scaling trends will force the replacement of SiO/sub 2/ as the gate dielectric. Due to constraints - primarily high gate leakage current - SiO/sub 2/ will likely be replaced by a high dielectric constant or high-k material. This paper will attempt to address some of the high-k material concerns by presenting promising results on HfO/sub 2/ stack structures with two forms of nitrogen incorporation - surface nitridation and top nitridation.