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Enhanced multi-threshold (MTCMOS) circuits using variable well bias
2001 / IEEE / 1-58113-371-5
This item was taken from the IEEE Conference ' Enhanced multi-threshold (MTCMOS) circuits using variable well bias ' Advanced CMOS technology can enable high levels of performance with reduced active power at the expense of increased standby leakage, MTCMOS has previously been described as a method of reducing leakage in standby modes, by addition of a power supply interrupt switch. Enhancements using variable well bias and layout techniques are described and demonstrate increased performance and reduced leakage over conventional MTCMOS circuits.
Variable Well Bias
Power Supply Interrupt Switch
Cmos Logic Circuits
Multi-threshold Cmos Circuit
Low-power Digital Circuit Design
Cmos Digital Integrated Circuits
Integrated Circuit Layout