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Enhanced multi-threshold (MTCMOS) circuits using variable well bias

By: Irnmediato, M.; Kosonocky, S.V.; Brown, J.; Mann, R.; Hook, T.; Cottrell, P.;

2001 / IEEE / 1-58113-371-5

Description

This item was taken from the IEEE Conference ' Enhanced multi-threshold (MTCMOS) circuits using variable well bias ' Advanced CMOS technology can enable high levels of performance with reduced active power at the expense of increased standby leakage, MTCMOS has previously been described as a method of reducing leakage in standby modes, by addition of a power supply interrupt switch. Enhancements using variable well bias and layout techniques are described and demonstrate increased performance and reduced leakage over conventional MTCMOS circuits.