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Dopant penetration effects on polysilicon gate HfO/sub 2/ MOSFET's
By: Byoung Hun Lee; Kang, L.; Onishi, K.; Lee, J.C.; Nieh, R.; Choi, R.; Chang Seok Kang; Yongjoo Jeon; Gopalan, S.; Dharmarajan, E.;
2001 / IEEE / 4-89114-012-7
This item was taken from the IEEE Conference ' Dopant penetration effects on polysilicon gate HfO/sub 2/ MOSFET's ' Effect of dopant penetration on electrical characteristics of polysilicon gate HfO/sub 2/ gate dielectric MOSFETs has been studied quantitatively for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V/sub fb/) but channel carrier mobility. Surface nitridation prior to HfO/sub 2/ deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction.
Dopant Penetration Effects
Hfo/sub 2/ Gate Dielectric
High Temperature Dopant Activation
Flatband Voltage Degradation
Channel Carrier Mobility
Hfo/sub 2/ Deposition
Boron Penetration Suppression
Equivalent Oxide Thickness Reduction
High-k Gate Dielectrics
Dielectric Thin Films
Semiconductor Device Testing
Polysilicon Gate Hfo/sub 2/ Mosfets