Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Dopant penetration effects on polysilicon gate HfO/sub 2/ MOSFET's

By: Byoung Hun Lee; Kang, L.; Onishi, K.; Lee, J.C.; Nieh, R.; Choi, R.; Chang Seok Kang; Yongjoo Jeon; Gopalan, S.; Dharmarajan, E.;

2001 / IEEE / 4-89114-012-7

Description

This item was taken from the IEEE Conference ' Dopant penetration effects on polysilicon gate HfO/sub 2/ MOSFET's ' Effect of dopant penetration on electrical characteristics of polysilicon gate HfO/sub 2/ gate dielectric MOSFETs has been studied quantitatively for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V/sub fb/) but channel carrier mobility. Surface nitridation prior to HfO/sub 2/ deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction.