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Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents
By: Mele, J.J.; Lenahan, P.M.; Weimer, R.; Liu, S.T.; Campbell, J.P.; Woodbury, D.; Lowry, R.K.; Kang, A.Y.;
2001 / IEEE / 0-7803-6587-9
This item was taken from the IEEE Conference ' Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents ' Stress induced leakage current is an important and quite possibly fundamental physically limiting problem in the scaling of metal-oxide-silicon integrated circuitry. We present evidence linking specific atomic scale defects to leakage currents in thermally grown silicon dioxide thin films on silicon. The defects identified are oxygen deficient silicon ""dangling bond"" centers. These centers have been identified through electron spin resonance measurements. We find a strong correspondence between the generation of an oxygen deficient silicon dangling bond defect in the oxide and the appearance of oxide leakage currents. We observe a strong correlation between the disappearance of these centers and the disappearance of leakage currents in relatively low temperature anneals (200/spl deg/C) in air. We also propose a model which provides an extremely straightforward explanation for the frequently reported close correspondence between the generation of stress induced leakage current and the generation of Si-SiO/sub 2/ interface states.
Integrated Circuit Reliability
Silicon Dangling Bond Defects
Oxide Leakage Currents
Metal-oxide-silicon Integrated Circuitry
Mos Ic Scaling
Atomic Scale Defects
Thermally Grown Silicon Dioxide Thin Films
Oxygen Deficient Silicon Dangling Bond Centers
Electron Spin Resonance Measurements
Oxygen Deficient Silicon Dangling Bond Defect
Low Temperature Anneals
Semiconductor Thin Films
Thin Film Circuits
Integrated Circuit Measurements
Integrated Circuit Measurement
Dielectric Thin Films
Mos Integrated Circuits
Stress Induced Leakage Current