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New MFIS structure of sol gel-(Bi,La)/sub 4/Ti/sub 3/O/sub 12/ with silicon nitride buffer layer
By: Kijima, T.; Ishiwara, H.; Fujisaki, Y.;
2000 / IEEE / 0-7803-5940-2
This item was taken from the IEEE Conference ' New MFIS structure of sol gel-(Bi,La)/sub 4/Ti/sub 3/O/sub 12/ with silicon nitride buffer layer ' Pt/Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12//Bi/sub 2/SiO/sub 5//Si/sub 3/N/sub 4//Si MFIS (Metal/Ferroelectric/Insulator/Semiconductor) structures were prepared by sol-gel method. Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12/ and Bi/sub 2/SiO/sub 5/ films were deposited at 800/spl deg/C. The Si/sub 3/N/sub 4/ was made by exposing N/sub 2/ radicals to a Si substrate from a radical gun in a vacuum chamber at temperatures from 800/spl deg/C. The MIS diode with this Si/sub 3/N/sub 4/ showed no hysteresis after any thermal treatment. 200 nm-thick Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12/ and 10 nm-thick Bi/sub 2/SiO/sub 5/ buffer films were formed by sol-gel method on a 1.8 nm thick Si/sub 3/N/sub 4/ layer. The capacitance-vs-voltage (C-V) characteristic of the MFIS diode showed 1.4 V memory window for the +/-5V voltage scan. The memory window width agreed well with the polarization characteristics (remanent polarization Pr=0.9 /spl mu/ C/cm/sup 2/ and coercive field Ec=40 kV/cm) of a Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12/ film, which were measured using a Pt/c-axis-oriented 100 mn-thick Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12//Pt capacitor. Moreover, two capacitance values at zero-bias were kept constant for over 24 h, which indicates the retention characteristic of the diode is excellent.
Ferroelectric Thin Films
Pt-(bila)/sub 4/ti/sub 3/o/sub 12/-bi/sub 2/sio/sub 5/-si/sub 3/n/sub 4/-si
Silicon Nitride Buffer Layer
Pt/bi/sub 3.25/la/sub 0.75/ti/sub 3/o/sub 12//bi/sub 2/sio/sub 5//si/sub 3/n/sub 4//si Mfis Structure
(bi,la)/sub 4/ti/sub 3/o/sub 12/ Film
Magnetic Field Induced Strain
Bi/sub 2/sio/sub 5/ Film