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Material properties of polysilicon layers deposited by atmospheric pressure iodine vapor transport

By: Matson, R.; Reedy, R.; Casey, J.; Bauer, R.; Wang, Q.; Ahrenkiel, R.; Yan, Y.; Page, M.; Ciszek, T.F.; Wang, T.H.; Al-Jassim, M.M.;

2000 / IEEE / 0-7803-5772-8

Description

This item was taken from the IEEE Conference ' Material properties of polysilicon layers deposited by atmospheric pressure iodine vapor transport ' Fast (3 /spl mu/m/min) and direct deposition of large-grain (/spl sim/20 /spl mu/m) polycrystalline silicon layers on foreign substrates at intermediate temperatures (/spl sim/900/spl deg/C) is achieved by an atmospheric pressure iodine vapor transport technique. A hole Hall mobility of 51 cm/sup 2//V.s at a doping density of 5.5/spl times/10/sup 17/ cm/sup -3/ was measured in an as-deposited material. After hydrogen passivation, it increased to 76 cm/sup 2//V.s. Crystallographic defects mostly consist of less detrimental stacking faults and twins, with a few dislocations. Diagnostic PV devices using an N/sup +/-a-Si/i-a-Si/APIVT-Si(absorber)/P/sup +/-CZ-Si structure demonstrated an open-circuit voltage of 0.48 V and 0.58 V at one and 13 suns, respectively. Highly [110]-oriented silicon layers were attained.