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Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium
By: Mashiro, S.; Oishi, M.; Kawashima, T.; Chenming Hu; Sakai, J.; Qiang Lu; Yee-Chia Yeo; Tsu-Jae King;
2000 / IEEE / 0-7803-6438-4
This item was taken from the IEEE Conference ' Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium ' We report the demonstration of a novel sub-100 nm CMOS technology with strained-Si/sub 0.76/Ge/sub 0.24//Si heterostructure channels formed by ultra-high-vacuum chemical-vapor-deposition (UHV-CVD). The incorporation of 24% Ge in the channel provides a 25% enhancement in PMOSFET drive current for channel lengths down to 0.1 /spl mu/m. Enhancement in NMOSFET drive current is concomitantly observed for channel lengths below 0.4 /spl mu/m.
Pmosfet Drive Current
Nmosfet Drive Current
0.1 To 0.4 Micron
Germanium Silicon Alloys
Strained Epitaxial Heterostructure Channels
Vapour Phase Epitaxial Growth
Semiconductor Epitaxial Layers