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A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications

By: De Blauwe, J.; Ostraat, M.; Atwater, H.A.; Flagan, R.C.; Hillenius, S.J.; Lee, J.T.C.; Bude, J.; Mansfield, W.; Kim, Y.; Baumann, F.; Grazul, J.L.; Ferry, E.; Cirelli, R.; Klemens, F.; Kerber, A.; Sorsch, T.; Weber, G.; Green, M.L.;

2000 / IEEE / 0-7803-6438-4

Description

This item was taken from the IEEE Conference ' A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications ' This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol-nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>10/sup 5/ P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60 /spl Aring/). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.