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Boron diffusion and activation in the presence of other species

By: Hong-Jyh Li; Banerjee, S.; Torres, K.; Zeitzoff, P.; Kirichenko, T.A.; Ganguly, S.; Kohli, P.;

2000 / IEEE / 0-7803-6438-4

Description

This item was taken from the IEEE Conference ' Boron diffusion and activation in the presence of other species ' Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with B into the Si substrate can achieve shallower junctions and higher B activation in semiconductor device applications.