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Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)
By: Nieh, R.; Gopalan, S.; Kang, L.; Choi, R.; Byoung Hun Lee; Onishi, K.; Kang, C.; Lee, J.C.; Wen-Jie Qi; Jeon, Y.;
2000 / IEEE / 0-7803-6438-4
This item was taken from the IEEE Conference ' Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/) ' MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films (HfO/sub 2/) and TaN gate electrode. Both self-aligned (higher thermal budget process) and non-self-aligned process (low thermal budget as in the replacement gate process) were used and compared. Excellent electrical characteristics (e.g. S/spl sim/68 mV/dec) and reliability characteristics (e.g. high E/sub BD/, low charge trapping and SILC) were also obtained.
8 To 12 A
High K Dielectric Materials
High-k Gate Dielectrics
Tan Gate Electrode
High-k Gate Dielectric Thin Film
Ultrathin Hafnium Oxide
Dielectric Thin Films
Equivalent Oxide Thickness