Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)

By: Nieh, R.; Gopalan, S.; Kang, L.; Choi, R.; Byoung Hun Lee; Onishi, K.; Kang, C.; Lee, J.C.; Wen-Jie Qi; Jeon, Y.;

2000 / IEEE / 0-7803-6438-4

Description

This item was taken from the IEEE Conference ' Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/) ' MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films (HfO/sub 2/) and TaN gate electrode. Both self-aligned (higher thermal budget process) and non-self-aligned process (low thermal budget as in the replacement gate process) were used and compared. Excellent electrical characteristics (e.g. S/spl sim/68 mV/dec) and reliability characteristics (e.g. high E/sub BD/, low charge trapping and SILC) were also obtained.