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Single-layer thin HfO/sub 2/ gate dielectric with n+-polysilicon gate
By: Yongjoo Jeon; Kang, L.; Lee, J.C.; Gopalan, S.; Nieh, R.; Wen-Jie Qi; Byoung Hun Lee; Onishi, K.;
2000 / IEEE / 0-7803-6305-1
This item was taken from the IEEE Conference ' Single-layer thin HfO/sub 2/ gate dielectric with n+-polysilicon gate ' MOSCAPs and MOSFETs of a single-layer thin HfO/sub 2/ gate dielectric with n+ polysilicon gate were fabricated and characterized. Polysilicon process was optimized such that leakage current and equivalent oxide thickness of HfO/sub 2/ remained low. Excellent C-V properties (e.g. low Dit and frequency dispersion) and reliability characteristics were obtained. Reasonable MOSFET quality was also demonstrated.
Equivalent Oxide Thickness
Interface State Density
High-k Gate Dielectrics
Rapid Thermal Annealing
High K Dielectric Materials
Single Layer Hfo/sub 2/ Gate Dielectric
Dielectric Thin Films