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Highly uniform 1.55 /spl mu/m wavelength lasers with deeply etched semiconductor/benzocyclobutene DBR
By: Wiedmann, J.; Raj, M.M.; Arai, S.; Matsui, K.; Ebihara, K.; Saka, Y.;
2000 / IEEE / 0-7803-6320-5
This item was taken from the IEEE Conference ' Highly uniform 1.55 /spl mu/m wavelength lasers with deeply etched semiconductor/benzocyclobutene DBR ' 1.55 /spl mu/m wavelength GaInAsP lasers with high reflective deeply etched semiconductor/benzocyclobutene (BCB) DBR showing low threshold current and high differential quantum efficiency were successfully obtained with high uniformity. Threshold current as low as 7.2 mA and differential quantum efficiency as high as 50% from the front cleaved facet were obtained with 160 /spl mu/m-long DBR lasers with 15-DBR reflectors on the rear side. The reflectivity was estimated to be as high as 95% from the measurement of the threshold current dependence on the cavity length. Finally, a preliminary aging test under a room temperature CW condition showed stable operation for duration in excess of 300 hours.
Differential Quantum Efficiency
Room Temperature Cw Operation
Distributed Bragg Reflectors
Distributed Bragg Reflector Lasers