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Temperature effect on the reliability of ZrO/sub 2/ gate dielectric deposited directly on silicon

By: Yongjoo Jeon; Laegu Kang; Byoung Hun Lee; Onishi, R.; Gopalan, S.; Wen-Jie Qi; Nieh, R.; Lee, J.C.;

2000 / IEEE / 0-7803-5860-0

Description

This item was taken from the IEEE Conference ' Temperature effect on the reliability of ZrO/sub 2/ gate dielectric deposited directly on silicon ' Temperature effect on the reliability of ZrO/sub 2/ gate dielectric has been presented. High effective voltage-ramp breakdown field was observed. The activation energy of temperature accelerated voltage-ramp breakdown calculated from Arrhenius plot indicates that the breakdown of ZrO/sub 2/ is less sensitive to temperature than a thermal oxide of similar electrical thickness. ZrO/sub 2/ films exhibit excellent TDDB characteristics with low charge trapping and no stress induced leakage current. The field and temperature acceleration for TDDB for the 15.8 /spl Aring/ capacitance equivalent oxide thickness (CET) ZrO/sub 2/ shows that the activation energy for TDDB falls into the range reported for oxide from 39 /spl Aring/ to 150 /spl Aring/. It was found that the extrapolated 10-year lifetime operating voltage can be as high as -1.9 V, even at 150/spl deg/C based on the ""log(t/sub BD/) vs E"" extrapolation model for a film with a CET of 15.8 /spl Aring/.