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200 W GaAs-based MODFET power amplifier for W-CDMA base stations
By: Hamaguchi, C.; Furukawa, H.; Yokoyama, T.; Ishida, H.; Tanaka, T.; Ueda, D.; Ota, Y.; Morimoto, S.; Maeda, M.;
1999 / IEEE / 0-7803-5410-9
This item was taken from the IEEE Conference ' 200 W GaAs-based MODFET power amplifier for W-CDMA base stations ' We have developed a novel GaAs-based MODFET with the breakdown voltage (BVdg) of 130 V keeping the maximum drain current (I/sub max/) over 300 mA/mm where double-recessed and offset gate structures are provided. This newly developed MODFET attained the output power of 200 W at a supplying voltage of 15 V and a quiescent drain current of 10 A, which is the highest output power exhibited by using GaAs based FET's ever reported.
Gaas-based Modfet Power Amplifier
Double-recessed Gate Structures
Offset Gate Structures
Semiconductor Optical Amplifiers
Code Division Multiple Access
Semiconductor Device Breakdown
Uhf Power Amplifiers
Uhf Field Effect Transistors
W-cdma Base Stations