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MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si
By: Lee, J.C.; Banerjee, S.; Ngai, T.; Onishi, K.; Wen-Jie Qi; Laegu Kang; Byoung Hun Lee; Renee Nieh; Yongjoo Jeon;
1999 / IEEE / 0-7803-5410-9
This item was taken from the IEEE Conference ' MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si ' MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si have been investigated. Thin equivalent oxide thickness (EOT), low leakage, negligible frequency dispersion, interface density less than 10/sup 11/ cm/sup -2/ eV/sup -1/, small hysteresis, excellent reliability characteristics have been demonstrated. The ZrO/sub 2/ film has been shown to be amorphous. A thin interfacial Zr-silicate layer (k>8) exists and is beneficial in maintaining good interfacial quality. This Zr-silicate layer grows after annealing and can be minimized through process optimization. Well-behaved p-channel MOS transistor characteristics with a subthreshold swing of 80 mV/decade have also been achieved.
Interface State Density
P-channel Mos Transistor
Zro/sub 2/ Amorphous Film
High-k Gate Dielectrics
High-k Gate Dielectric
Dielectric Thin Films
Equivalent Oxide Thickness