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Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures
1999 / IEEE / 0-7803-5187-8
This item was taken from the IEEE Conference ' Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures ' Narrow-channel nMOSFETs with recessed LOCOS (R-LOCOS) isolation structures exhibit less hot-carrier-induced degradation than wide-channel nMOSFETs, but the degradation mechanism of both devices is the same. This new finding is explained by the fact that in deep sub-/spl mu/m MOSFETs with ultra-thin gate oxides and a relatively thin field oxide, the dominant factor deciding the degradation behaviour in narrow channel and wide channel devices is the vertical electric field effect rather than the mechanical stress effect.
Recessed-locos Isolation Structures
R-locos Isolation Structures
Ultra-thin Gate Oxides
Thin Field Oxide
Vertical Electric Field Effect
Mechanical Stress Effect
Hot Carrier Effects
Dielectric Thin Films
Semiconductor Device Reliability
Semiconductor Device Testing