Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures

By: Jang, S.A.; Kim, Y.B.; Chan, D.S.H.; Qin, W.H.; Yeo, I.S.; Cho, B.J.; Chim, W.K.; Yue, J.M.P.;

1999 / IEEE / 0-7803-5187-8

Description

This item was taken from the IEEE Conference ' Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures ' Narrow-channel nMOSFETs with recessed LOCOS (R-LOCOS) isolation structures exhibit less hot-carrier-induced degradation than wide-channel nMOSFETs, but the degradation mechanism of both devices is the same. This new finding is explained by the fact that in deep sub-/spl mu/m MOSFETs with ultra-thin gate oxides and a relatively thin field oxide, the dominant factor deciding the degradation behaviour in narrow channel and wide channel devices is the vertical electric field effect rather than the mechanical stress effect.