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Thermal impact and process diagnosis of copper chemical mechanical polish
1999 / IEEE / 0-7803-5174-6
This item was taken from the IEEE Conference ' Thermal impact and process diagnosis of copper chemical mechanical polish ' To effectively improve and control copper polish performance, a thermal impact study and a process diagnosis methodology were explored and proposed in this paper for 0.18 /spl mu/m technology and beyond. Micro and macro thermal impacts on polishing of copper damascene wafers with trench structures were investigated by studying basic chemical kinetics of some mature copper slurries. Infrared thermal camera techniques were employed to in-situ monitor the macro thermal impact responses of the polish pad. Based on these responses, a process diagnosis algorithm was deduced for diagnosis of copper polish nonuniformity at the end of each polish. Several experiments have demonstrated the usefulness of these methodologies.
Integrated Circuit Testing
Integrated Circuit Yield
Copper Chemical Mechanical Polish
Copper Polish Performance
Process Diagnosis Methodology
Micro Thermal Impact
Copper Damascene Wafers
Infrared Thermal Camera Techniques
Macro Thermal Impact Response
Process Diagnosis Algorithm
Copper Polish Nonuniformity
Integrated Circuit Metallisation
Integrated Circuit Interconnections
Chemical Mechanical Polishing
Macro Thermal Impact