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Deep submicron on-chip crosstalk [and ANN prediction]

By: Yang, Z.; Mourad, S.;

1999 / IEEE / 0-7803-5276-9

Description

This item was taken from the IEEE Conference ' Deep submicron on-chip crosstalk [and ANN prediction] ' In this paper, we study the effect of crosstalk using three deep submicron technologies. We start the experiment by comparing the different technologies. Then we concentrate on 0.18 /spl mu/m technology to examine the effect of different parameters on the crosstalk voltage peak and circuit timing. The parameters of interest are the size of the driving and load device and the length of the coupled line. The results confirmed that finer technologies cause higher impact. The magnitude of crosstalk in 0.18 /spl mu/m may be high enough to violate noise margin. Preliminary layout guidelines are deduced. To facilitate applying them to CAD tools, an ANN was used to predict crosstalk given data on the driver, the load and the length of the interconnect.