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An 18 Mb, 12.3 GB/s CMOS pipeline-burst cache SRAM with 1.54 Gb/s/pin

By: Yong-Gee Ng; Yi Lu; Denham, M.; Kolousek, J.; Nintunze, N.; Bhattacharya, U.; Cangsang Zhao; Varadarajan, H.; Sarkez, K.;

1999 / IEEE / 0-7803-5126-6

Description

This item was taken from the IEEE Conference ' An 18 Mb, 12.3 GB/s CMOS pipeline-burst cache SRAM with 1.54 Gb/s/pin ' This 18 Mb pipeline-burst cache SRAM has 12.3 GB/s data transfer rate. The 14.3/spl times/14.6 mm/sup 2/ chip uses a 5.6 /spl mu/m/sup 2/ (2.22/spl times/2.52) 6-transistor cell and is fabricated on 0.18 /spl mu/m 6-metal-layer, 1.3-1.5 V CMOS. The paper shows the chip floor plan and array architecture. The chip is divided into four quadrants, each composed of 19 global subarrays, including one for redundancy. A data transfer rate of 1.54 Gb/s/pin on each I/O is achieved with a 770 MHz 50% duty cycle clock at 1.5 V, 25/spl deg/C. Data transition is on both clock edges using dual-edge-triggered flip-flops. With an 8 B I/O port (64-data and 8-parity pins), the chip has an aggregate bandwidth of 12.3 GB/s. A cycle on this SRAM actually refers to one half period (or a phase) of the clock.