Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
The best combination of aluminum and copper interconnects for a high performance 0.18 /spl mu/m CMOS logic device
By: Morimoto, N.; Kawashima, H.; Amishiro, H.; Harada, A.; Igarashi, M.; Arima, H.; Kusumi, Y.; Toyoda, Y.; Higashitani, K.; Fukada, T.; Mori, T.; Ohsaki, A.; Saito, T.;
1998 / IEEE / 0-7803-4774-9
This item was taken from the IEEE Conference ' The best combination of aluminum and copper interconnects for a high performance 0.18 /spl mu/m CMOS logic device ' A high performance 0.18 /spl mu/m CMOS logic device has been developed with 0.15 /spl mu/m transistors and six-level interconnects. The multi-level interconnect system consists of a conventional process with Al wire and a dual damascene process with Cu wire. 4-level Al interconnects with fine metal pitch are suitable for short distance wiring such as intra block cell to cell interconnects, whereas 2-level Cu interconnects with coarse metal pitch are used for long distance wiring such as mega block to block interconnects to achieve high-speed and high-density LSI devices.
Intra Block Cell To Cell Interconnects
Coarse Metal Pitch
Long Distance Wiring
Mega Block To Block Interconnects
High-density Lsi Devices
High-k Gate Dielectrics
Short Distance Wiring
Fine Metal Pitch
Dual Damascene Process
Multi-level Interconnect System
Cmos Logic Device
Large Scale Integration
Integrated Circuit Metallisation
Cmos Logic Circuits