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Effect of barrier layer on the electrical and reliability characteristics of high-k gate dielectric films
1998 / IEEE / 0-7803-4774-9
This item was taken from the IEEE Conference ' Effect of barrier layer on the electrical and reliability characteristics of high-k gate dielectric films ' Electrical and reliability characteristics of several metal/high-k/(barrier layer)/Si capacitor structures have been investigated. The equivalent oxide thickness (EOT) increased as the annealing temperature increased, especially in oxygen ambient. Jet vapor-deposited (JVD) nitride was found to be a good oxidation barrier which is important for achieving thin EOT. Introducing TiO/sub 2/ as a barrier layer reduced the leakage current and EOT of Pt/BST/Si capacitor. The conduction mechanism in Pt/TiO/sub 2//Si structure was found to be tunneling-like behaviour limited by the interfacial layer. Hysteresis could be minimized by the optimization of the annealing process. In reliability characteristics, TiO/sub 2/ revealed no significant degradation and exhibited better wear-out properties than conventional SiO/sub 2/.
Equivalent Oxide Thicknes
Jet Vapor Deposited Nitride
High K Dielectric Materials
High-k Gate Dielectrics
Binary Search Trees
Dielectric Thin Films
Gate Dielectric Film
Interfacial Barrier Layer
Semiconductor Device Reliability
Vapour Deposited Coatings