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Pseudo-SOI: P-N-P-channel-doped bulk MOSFET for low-voltage high-performance applications

By: Miyamoto, M.; Nagano, T.; Nagai, R.;

1998 / IEEE / 0-7803-4774-9

Description

This item was taken from the IEEE Conference ' Pseudo-SOI: P-N-P-channel-doped bulk MOSFET for low-voltage high-performance applications ' A ""pseudo-SOI (P-SOI)"" MOSFET using a bulk substrate with small subthreshold swing, high drain current, low junction capacitance, and low substrate-bias coefficient comparable to those of thin-film SOI MOSFET has been developed. The P-SOI MOSFET features a P-N-P channel profile, in which the sandwiched N-type layer is fully depleted by the internal built-in potential. Fabricated 0.25-/spl mu/m P-SOI MOSFET achieves subthreshold swing of 73 mV/decade and had a 25% larger drain current, 60% lower source/drain junction capacitance, and 40% lower substrate-bias coefficient than those of a control MOSFET.