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Integration of non photosensitive polyimide into an existing crossover photoresist process
By: Rhorer, A.; Larson, L.;
1998 / IEEE / 0-7803-4523-1
This item was taken from the IEEE Conference ' Integration of non photosensitive polyimide into an existing crossover photoresist process ' A wafer fabrication process required a 6 /spl mu/m thick polyimide coating over the final passivation to produce fringe capacitance shift for final electrical trimming prior to final hybrid packaging. This article discusses the methodology used in the development of the spin coating process, polyimide softbake temperature determination and integration of the nonphotoimagable polyimide into an existing crossover photoresist process. A unique method of determining the polyimide's etch rate in a positive developer solution is discussed along with the use of FTIR to characterize the high temperature imidization process.
Integrated Circuit Packaging
Fourier Transform Spectra
High Temperature Imidization Process
Nonphotosensitive Polyimide Integration
Crossover Photoresist Process
Wafer Fabrication Process
Fringe Capacitance Shift
Final Electrical Trimming
Final Hybrid Packaging
Spin Coating Process
Polyimide Softbake Temperature Determination
Nonphotoimagable Polyimide Integration
Polyimide Etch Rate
Positive Developer Solution