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Anomalous dielectric dispersion in tantalum oxide films prepared by RF sputtering

By: Miyairi, K.;

1998 / IEEE / 0-7803-4237-2

Description

This item was taken from the IEEE Conference ' Anomalous dielectric dispersion in tantalum oxide films prepared by RF sputtering ' Dielectric properties (/spl epsiv/ and tan /spl delta/) of thin sputtered tantalum oxide films have been measured in the low frequency range. Anomalous large values of /spl epsiv/ and tan /spl delta/ have been observed at high temperatures above 100/spl deg/C. The explicit thickness dependence exists in the frequency dependence of /spl epsiv/ and tan /spl delta/. These results have been interpreted by Maxwell-Wagner theory.