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CVD photoresist processes for sub-0.18 design rules

By: Sugiarto, D.; Weidman, T.; Yang, J.; Lee, C.; Osborne, Z.; Mui, D.; Nault, M.;

1998 / IEEE / 0-7803-4770-6


This item was taken from the IEEE Conference ' CVD photoresist processes for sub-0.18 design rules ' The CVD photoresist material plasma polymerized methylsilane (PPMS) provides a thin film high resolution imaging layer for 193 nm lithography. Patterned films are readily converted into silicon dioxide hard masks useful for patterning critical device layers with high selectivity. We describe the application of this process for patterning polysilicon gates and new a low /spl kappa/ dielectric material.