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Low cost coplanar 77 GHz single-balanced mixer using ion-implanted GaAs Schottky diodes
By: Shimon, R.; Caruth, D.; Middleton, J.; Hsia, H.; Feng, M.;
1998 / IEEE / 0-7803-4471-5
This item was taken from the IEEE Conference ' Low cost coplanar 77 GHz single-balanced mixer using ion-implanted GaAs Schottky diodes ' A W-band single-balanced mixer and W-band LO amplifier, suitable for automotive collision-avoidance radar, have been designed and fabricated using a 0.18 /spl mu/m direct ion-implanted GaAs MESFET process developed at the University of Illinois at Urbana-Champaign. As a downconverter with an LO frequency of 77 GHz and an RF frequency of 77.1 GHz, the coplanar rat-race mixer achieves a conversion loss of 14.7 dB at an LO power of +3.5 dBm. The coplanar LO amplifier exhibits 5 dB of gain over a 4 GHz bandwidth centered at 77 GHz.
Millimetre Wave Mixers
Mesfet Integrated Circuits
Millimetre Wave Amplifiers
Schottky Diode Mixers
Low Cost Coplanar Mixer
Ion-implanted Gaas Schottky Diodes
Automotive Collision-avoidance Radar
Ion-implanted Gaas Mesfet Process
Coplanar Rat-race Mixer
Field Effect Mimic