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Highly reliable 0.18 /spl mu/m Au/WSi gate pseudomorphic HJFETs with individually grounded source finger vias
1997 / IEEE / 0-7803-3887-1
This item was taken from the IEEE Conference ' Highly reliable 0.18 /spl mu/m Au/WSi gate pseudomorphic HJFETs with individually grounded source finger vias ' A highly reliable 0.18 /spl mu/m Au/WSi refractory gate pseudomorphic HJFET with individually grounded source finger vias has been developed for V-band MMIC applications. The HJFET exhibited an MTTF of 1.6E7 hours at a channel temperature of 130/spl deg/C. A three-stage amplifier MMIC has demonstrated state-of-the-art performance, generating 16 dBm output power with 25 dB small signal gain at 60 GHz band. This result demonstrates high potential of our MMIC technology.
Integrated Circuit Design
Integrated Circuit Reliability
Semiconductor Device Metallisation
Integrated Circuit Metallisation
Millimetre Wave Field Effect Transistors
Grounded Source Finger Vias
V-band Mmic Applications
Three-stage Amplifier Mmic
Millimeter Wave Technology
Junction Gate Field Effect Transistors
Jfet Integrated Circuits
Field Effect Mimic
Millimetre Wave Amplifiers
Au/wsi Gate Pseudomorphic Hjfets