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Highly reliable 0.18 /spl mu/m Au/WSi gate pseudomorphic HJFETs with individually grounded source finger vias

By: Takahashi, K.; Unozawa, K.; Nagai, K.; Mizoe, J.; Matsumura, T.; Sakura, N.;

1997 / IEEE / 0-7803-3887-1

Description

This item was taken from the IEEE Conference ' Highly reliable 0.18 /spl mu/m Au/WSi gate pseudomorphic HJFETs with individually grounded source finger vias ' A highly reliable 0.18 /spl mu/m Au/WSi refractory gate pseudomorphic HJFET with individually grounded source finger vias has been developed for V-band MMIC applications. The HJFET exhibited an MTTF of 1.6E7 hours at a channel temperature of 130/spl deg/C. A three-stage amplifier MMIC has demonstrated state-of-the-art performance, generating 16 dBm output power with 25 dB small signal gain at 60 GHz band. This result demonstrates high potential of our MMIC technology.