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Mechanism(s) of hydrogen diffusion in silicon solar cells during forming gas anneal

By: Reedy, R.; Symko, M.I.; Sopori, B.; Matson, R.; Jones, K.;

1997 / IEEE / 0-7803-3767-0

Description

This item was taken from the IEEE Conference ' Mechanism(s) of hydrogen diffusion in silicon solar cells during forming gas anneal ' Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that the formation of a N/sup +/ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing of various commercial photovoltaic silicon substrates and cells are discussed.