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Mechanism(s) of hydrogen diffusion in silicon solar cells during forming gas anneal
By: Reedy, R.; Symko, M.I.; Sopori, B.; Matson, R.; Jones, K.;
1997 / IEEE / 0-7803-3767-0
This item was taken from the IEEE Conference ' Mechanism(s) of hydrogen diffusion in silicon solar cells during forming gas anneal ' Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that the formation of a N/sup +/ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing of various commercial photovoltaic silicon substrates and cells are discussed.
Silicon Solar Cells
Forming Gas Anneal
N/sup +/ Region Formation
Photovoltaic Silicon Substrates
Photovoltaic Silicon Cells
Renewable Energy Resources