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A highly manufacturable corner rounding solution for 0.18 /spl mu/m shallow trench isolation
By: Bude, M.; Klemens, F.P.; Pinto, M.R.; Lloyd, E.J.; Rafferty, C.S.; Liu, C.T.; Baumann, F.H.; Pai, C.S.; Chang, C.P.; Clemens, J.T.; Liu, R.C.; Hillenius, S.J.; Vaidya, H.; Lai, W.Y.C.; Colonell, J.I.; Cheung, K.P.; Miner, J.F.;
1997 / IEEE / 0-7803-4100-7
This item was taken from the IEEE Conference ' A highly manufacturable corner rounding solution for 0.18 /spl mu/m shallow trench isolation ' In this work, we first establish the relationship between corner leakage and corner rounding through device simulation. Then, we demonstrate a novel method to produce corner rounding, using a post-CMP, high temperature re-oxidation process (HTR-STI). A semi-empirical model correlating rounding with re-oxidation and nitride mask thickness is derived from mechanical studies. Finally, we show the electrical properties of devices with HTR-STI for the 0.18 /spl mu/m technology.
Nitride Mask Thickness
High Temperature Re-oxidation
Shallow Trench Isolation
Semiconductor Process Modelling